Supplier Device Package:
Current - Average Rectified (Io):
Voltage - DC Reverse (Vr) (Max):
Reverse Recovery Time (trr):
Operating Temperature - Junction:
Capacitance @ Vr, F:
Image Part Manufacturer Description MOQ Stock Action
MURS360S-E3/5BT Vishay Dale Thin Film
DIODE GEN PURP 600V 1.5A DO214AA
1
8,855
In-stock
Get Quote
MURS340SHE3_A/I Vishay Dale Thin Film
DIODE GEN PURP 400V 1.5A DO214AA
1
3,201
In-stock
Get Quote
MURS340S-E3/52T Vishay Dale Thin Film
DIODE GEN PURP 400V 1.5A DO214AB
1
2,250
In-stock
Get Quote
ES3JBHR5G Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AA
1
2,386
In-stock
Get Quote
ES3HB R5G Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 3A DO214AA
1
4,779
In-stock
Get Quote
ES3JB R5G Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AA
1
155
In-stock
Get Quote
MURS360S-E3/52T Vishay Dale Thin Film
DIODE GEN PURP 600V 1.5A DO214AA
1 Get Quote
MURS340S-M3/5BT Vishay Dale Thin Film
DIODE GEN PURP 400V 1.5A DO214AA
6,400 Get Quote
MURS360S-M3/5BT Vishay Dale Thin Film
DIODE GEN PURP 600V 1.5A DO214AA
6,400 Get Quote
MURS360S-M3/52T Vishay Dale Thin Film
DIODE GEN PURP 600V 1.5A DO214AA
6,000 Get Quote
MURS340S-E3/5BT Vishay Dale Thin Film
DIODE GEN PURP 400V 1.5A DO214AB
3,200 Get Quote
MURS340SHE3_A/H Vishay Dale Thin Film
DIODE GEN PURP 400V 1.5A DO214AA
2,250 Get Quote
MURS360SHE3_A/H Vishay Dale Thin Film
DIODE GEN PURP 600V 1.5A DO214AA
2,250 Get Quote
MURS360SHE3_A/I Vishay Dale Thin Film
DIODE GEN PURP 600V 1.5A DO214AA
3,200 Get Quote
ES3JB Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AA
6,000 Get Quote
ES3JBH Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AA
6,000 Get Quote
ES3HB Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 3A DO214AA
6,000 Get Quote
MURS340SHE3/5BT Vishay Dale Thin Film
DIODE GEN PURP 400V 1.5A DO214AB
1 Get Quote
MURS360SHE3/5BT Vishay Dale Thin Film
DIODE GEN PURP 600V 1.5A DO214AA
1 Get Quote
MURS340SHE3/52T Vishay Dale Thin Film
DIODE GEN PURP 400V 1.5A DO214AB
1 Get Quote
1 / 2 Page, 23 Records